PBSS302PD,115 NXP Semiconductors, PBSS302PD,115 Datasheet - Page 11

• Manufacturer Part Number: PBSS302PD,115
• Description: TRANS PNP 40V 4A LOW SAT SOT457
• Manufacturer: NXP Semiconductors

Specifications of PBSS302PD,115

• Package / Case: SC-74-6
• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 450mV @ 600mA, 6A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 175 @ 2A, 2V
• Power - Max: 1.1W
• Frequency - Transition: 110MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 30
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 4 A
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 2500 mW
• Maximum Operating Frequency: 110 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4152-2; 934059132115; PBSS302PD T/R; PBSS302PD T/R

NXP Semiconductors
11. Soldering
PBSS302PD_2
Product data sheet
Fig 16. Reflow soldering footprint SOT457 (SC-74)
Fig 17. Wave soldering footprint SOT457 (SC-74)
5.05
3.30
Dimensions in mm
Dimensions in mm
2.825
0.95
Rev. 02 — 6 December 2007
5.30
1.40
4.30
3.45
1.95
1.60
1.70
3.10
3.20
40 V, 4 A PNP low V
msc422
0.45 0.55
0.45
1.45 4.45
msc423
PBSS302PD
CEsat
© NXP B.V. 2007. All rights reserved.
solder lands
solder resist
occupied area
solder paste
(BISS) transistor
solder lands
solder resist
occupied area
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