PBSS302PD,115 NXP Semiconductors, PBSS302PD,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS302PD,115
• Description: TRANS PNP 40V 4A LOW SAT SOT457
• Manufacturer: NXP Semiconductors

Specifications of PBSS302PD,115

• Package / Case: SC-74-6
• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 450mV @ 600mA, 6A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 175 @ 2A, 2V
• Power - Max: 1.1W
• Frequency - Transition: 110MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 30
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 4 A
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 2500 mW
• Maximum Operating Frequency: 110 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4152-2; 934059132115; PBSS302PD T/R; PBSS302PD T/R

NXP Semiconductors
PBSS302PD_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
Symbol
T
T
T
Fig 1. Power derating curves
j
amb
stg
Device mounted on a ceramic PCB, Al
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Operated under pulsed conditions: duty cycle
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, mounting pad for collector 1 cm
(4) FR4 PCB, standard footprint
Limiting values
Parameter
junction temperature
ambient temperature
storage temperature
(mW)
Rev. 02 — 6 December 2007
P
1600
1200
2
tot
O
800
400
3
0
, standard footprint
…continued
75
25
2
(1)
(2)
(3)
(4)
O
Conditions
3
, standard footprint.
25
2
2
10 % and pulse width t
40 V, 4 A PNP low V
75
125
T
006aaa270
amb
( C)
Min
-
175
p
65
65
PBSS302PD
10 ms.
CEsat
© NXP B.V. 2007. All rights reserved.
Max
150
+150
+150
(BISS) transistor
Unit
C
C
C
2
2
.
.
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