SMBTA 42 E6327 Infineon Technologies, SMBTA 42 E6327 Datasheet - Page 4

• Manufacturer Part Number: SMBTA 42 E6327
• Description: TRANSISTOR NPN 300V SOT-23
• Manufacturer: Infineon Technologies

Specifications of SMBTA 42 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 360mW
• Frequency - Transition: 70MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25 at 1 mA at 10 V
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 360 mW
• Maximum Operating Frequency: 70 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SMBTA 42 E6327; SMBTA42E6327INTR; SMBTA42E6327XT; SP000011000

f
Transition frequency f
V
Total power dissipation P
T
CE
MHz
mW
10
10
10
5
400
320
280
240
200
160
120
= 10 V, f = 100 MHz
80
40
3
2
1
10
0
0
SMBTA 42/43
0
15
30
5
45
10
1
60
T
75
=
5
90 105 120
tot
( I
10
= ( T
C
2
)
mA
C
S
EHP00839
)
T
°C
5
S
150
10
3
4
P
P
Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load
P
tot max
tot
totmax
DC
pF
10
10
10
10
90
70
60
50
40
30
20
10
0
5
5
5
0
10
/ P
3
2
1
0
SMBTA 42/43
-6
totDC
10
4
=
-5
SMBTA42/MMBTA42
10
( t
8
p
CEB
-4
)
D
=
t
T
10
p
12
-3
t
p
eb
10
16
cb
-2
2007-04-19
T
= ( V
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
= ( V
t
V
s
p
EHP00840
V
EB
CB
CCB
CB
)
(V
22
10
)
EB
0
)