PMBT5550,215 NXP Semiconductors, PMBT5550,215 Datasheet - Page 2

TRANS NPN 140V 300MA SOT23

PMBT5550,215

Manufacturer Part Number
PMBT5550,215
Description
TRANS NPN 140V 300MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBT5550,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
300mA
Voltage - Collector Emitter Breakdown (max)
140V
Transistor Type
NPN
Frequency - Transition
300MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
250mV @ 5mA, 50mA
Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
140 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
300 mA
Maximum Dc Collector Current
600 mA
Power Dissipation
250 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933845720215::PMBT5550 T/R::PMBT5550 T/R
NXP Semiconductors
FEATURES
• Low current (max. 300 mA)
• Low voltage (max. 140 V).
APPLICATIONS
• Telephony.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: PMBT5401.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 21
PMBT5550
PMBT5550
V
V
V
I
I
I
P
T
T
T
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
NPN high-voltage transistor
NUMBER
SYMBOL
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
PARAMETER
MARKING CODE
plastic surface mounted package; 3 leads
*1F
(1)
open emitter
open base
open collector
T
amb
DESCRIPTION
≤ 25 °C; note 1
2
PINNING
PACKAGE
handbook, halfpage
CONDITIONS
PIN
Fig.1 Simplified outline (SOT23) and symbol.
1
2
3
Top view
1
base
emitter
collector
3
−65
−65
MIN.
DESCRIPTION
2
MAM255
160
140
6
300
600
100
250
+150
150
+150
Product data sheet
MAX.
PMBT5550
1
VERSION
SOT23
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT

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