PMBT5550,215 NXP Semiconductors, PMBT5550,215 Datasheet - Page 4

• Manufacturer Part Number: PMBT5550,215
• Description: TRANS NPN 140V 300MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT5550,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 140V
• Transistor Type: NPN
• Frequency - Transition: 300MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 50mA
• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 140 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 300 mA
• Maximum Dc Collector Current: 600 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933845720215::PMBT5550 T/R::PMBT5550 T/R

NXP Semiconductors
2004 Jan 21
handbook, full pagewidth
NPN high-voltage transistor
h FE
160
120
80
40
0
10
−1
1
Fig.2 DC current gain; typical values.
4
10
V CE = 5 V
10
2
I C mA
PMBT5550
Product data sheet
MGD814
10
3