PMBT4403,215 NXP Semiconductors, PMBT4403,215 Datasheet - Page 2
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PMBT4403,215
Manufacturer Part Number
PMBT4403,215
Description
TRANS PNP SW 600MA 40V SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBT4403235.pdf
(7 pages)
Specifications of PMBT4403,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
750mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 2V
Power - Max
250mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.6 A
Power Dissipation
250 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
40V
Emitter-base Voltage
5V
Collector Current (dc) (max)
600mA
Frequency (max)
200MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1744-2
933821340215
PMBT4403 T/R
933821340215
PMBT4403 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PMBT4403,215
Manufacturer:
NXP Semiconductors
Quantity:
14 400
NXP Semiconductors
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Industrial and consumer switching applications.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complement: PMBT4401.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 21
PMBT4403
PMBT4403
V
V
V
I
I
I
P
T
T
T
C
CM
BM
NUMBER
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP switching transistor
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
−
PARAMETER
MARKING CODE
plastic surface mounted package; 3 leads
*2T
(1)
open emitter
open base
open collector
T
amb
DESCRIPTION
2
≤ 25 °C; note 1
PACKAGE
PINNING
handbook, halfpage
CONDITIONS
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
−
−
−
−
−
−
−
−65
−
−65
MIN.
2
MAM256
Product data sheet
PMBT4403
−40
−40
−5
−600
−800
−200
250
+150
150
+150
1
MAX.
VERSION
SOT23
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT