PMBT4403,215 NXP Semiconductors, PMBT4403,215 Datasheet - Page 3

• Manufacturer Part Number: PMBT4403,215
• Description: TRANS PNP SW 600MA 40V SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT4403,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 250mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 600mA
• Frequency (max): 200MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1744-2; 933821340215; PMBT4403 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 21
R
I
I
h
V
V
C
C
f
Switching times (between 10% and 90% levels); (see Fig.3)
t
t
t
t
t
t
amb
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
SYMBOL
FE
CEsat
BEsat
PNP switching transistor
th(j-a)
c
e
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
PARAMETER
PARAMETER
I
I
V
V
I
I
I
I
I
I
I
I
I
E
C
C
C
C
C
E
C
C
Con
Boff
CE
CE
I
I
I
I
I
= 0; V
= I
= 0; V
= −150 mA; I
= −500 mA; I
= −150 mA; I
= −500 mA; I
= I
= −20 mA; V
C
C
C
C
C
= 15 mA
= −150 mA; I
= −1 V; (see Fig.2)
= −2 V
= −0.1 mA
= −1 mA
= −10 mA
= −150 mA
= −500 mA
e
c
= 0; V
= 0; V
CB
EB
3
= −40 V
= −5 V
note 1
CB
EB
CONDITIONS
CE
B
B
B
B
= −10 V; f = 1 MHz
= −500 mV; f = 1 MHz
= −15 mA
= −50 mA
= −15 mA
= −50 mA
Bon
= −10 V; f = 100 MHz 200
CONDITIONS
= −15 mA;
−
−
30
60
100
100
20
−
−
−
−
−
−
−
−
−
−
−
−
MIN.
VALUE
500
PMBT4403
Product data sheet
−50
−50
−
−
−
300
−
−400
−750
−950
−1.3
8.5
35
−
40
15
30
350
300
50
MAX.
UNIT
K/W
nA
nA
mV
mV
mV
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns
UNIT