PMBT4403,215 NXP Semiconductors, PMBT4403,215 Datasheet - Page 4

• Manufacturer Part Number: PMBT4403,215
• Description: TRANS PNP SW 600MA 40V SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT4403,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 250mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 600mA
• Frequency (max): 200MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1744-2; 933821340215; PMBT4403 T/R

NXP Semiconductors
2004 Jan 21
handbook, full pagewidth
h FE
PNP switching transistor
300
200
100
V
R1 = 68 Ω; R2 = 325 Ω; R
V
Oscilloscope: input impedance Z
i
BB
−10
0
= −9.5 V; T = 500 µs; t
= 3.5 V; V
−1
CC
= −29.5 V.
p
B
= 10 µs; t
= 325 Ω; R
i
= 50 Ω.
r
−1
= t
C
oscilloscope
f
≤ 3 ns.
= 160 Ω.
V i
Fig.2 DC current gain; typical values.
Fig.3 Test circuit for switching times.
(probe)
450 Ω
R1
R2
−10
R B
V BB
4
R C
V CC
DUT
V o
MGD624
(probe)
450 Ω
−10
2
oscilloscope
V CE = −1 V
I C mA
PMBT4403
Product data sheet
MGD812
−10
3