PMST2907A,115 NXP Semiconductors, PMST2907A,115 Datasheet - Page 2

TRANS PNP 60V 200MA SOT323

PMST2907A,115

Manufacturer Part Number
PMST2907A,115
Description
TRANS PNP 60V 200MA SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMST2907A,115

Package / Case
SC-70-3, SOT-323-3
Mounting Type
Surface Mount
Power - Max
200mW
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
60V
Transistor Type
PNP
Frequency - Transition
200MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Collector/base Gain Hfe Min
75
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 60 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 600 mA
Maximum Dc Collector Current
- 800 mA
Power Dissipation
200 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage
60V
Emitter-base Voltage
5V
Collector Current (dc) (max)
600mA
Frequency (max)
200MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934044580115::PMST2907A T/R::PMST2907A T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMST2907A,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP switching transistor in an SC-70; SOT323 plastic
package. NPN complement: PMST2222A.
MARKING
Note
1.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2001 Nov 19
PMST2907A
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
Low current (max. 600 mA)
Low voltage (max. 60 V).
Medium power switching
General purpose amplification.
CBO
CEO
EBO
tot
PNP switching transistor
= - : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
2F
(1)
open emitter
open base
open collector
T
amb
2
25 C; note 1
PINNING
handbook, halfpage
CONDITIONS
Fig.1
PIN
1
2
3
Top view
Simplified outline (SC-70; SOT323) and
symbol.
base
emitter
collector
1
3
DESCRIPTION
65
65
2
MIN.
Product specification
MAM048
PMST2907A
200
+150
150
+150
1
60
60
5
600
800
200
MAX.
3
2
V
V
V
mA
mA
mA
mW
C
C
C
UNIT

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