PMST2907A,115 NXP Semiconductors, PMST2907A,115 Datasheet - Page 3

• Manufacturer Part Number: PMST2907A,115
• Description: TRANS PNP 60V 200MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of PMST2907A,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 200mW
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Transistor Type: PNP
• Frequency - Transition: 200MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Collector/base Gain Hfe Min: 75
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 60 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 600 mA
• Maximum Dc Collector Current: - 800 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 600mA
• Frequency (max): 200MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934044580115::PMST2907A T/R::PMST2907A T/R

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Nov 19
R
I
I
h
V
V
C
C
f
Switching times (between 10% and 90% levels); (see Fig.2)
t
t
t
t
t
t
amb
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
SYMBOL
FE
CEsat
BEsat
th j-a
c
e
PNP switching transistor
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
p
300 s;
PARAMETER
0.02.
PARAMETER
I
I
I
V
I
I
I
I
I
I
I
f = 100 MHz; note 1
I
I
E
E
C
C
C
C
C
E
C
C
Con
Boff
CE
I
I
I
I
I
= 0; V
= 0; V
= i
= 0; V
= 150 mA; I
= 500 mA; I
= 150 mA; I
= 500 mA; I
= i
= 50 mA; V
C
C
C
C
C
= 15 mA
= 150 mA; I
= 10 V
= 0.1 mA
= 1 mA
= 10 mA; note 1
= 150 mA; note 1
= 500 mA; note 1
e
c
= 0; V
= 0; V
CB
CB
EB
3
= 50 V
= 50 V; T
= 3 V
CONDITIONS
CB
EB
note 1
CE
= 2 V; f = 1 MHz
B
B
B
B
= 10 V; f = 1 MHz
= 15 mA; note 1
= 50 mA; note 1
= 15 mA; note 1
= 50 mA; note 1
Bon
= 20 V;
CONDITIONS
= 15 mA;
j
= 150 C
75
100
100
100
50
200
MIN.
VALUE
625
PMST2907A
Product specification
300
8
30
45
15
35
300
250
50
10
10
50
400
1.6
1.3
2.6
MAX.
UNIT
K/W
nA
nA
mV
V
V
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns
A
UNIT