BSR14,215 NXP Semiconductors, BSR14,215 Datasheet - Page 3

• Manufacturer Part Number: BSR14,215
• Description: TRANSISTOR NPN SWITCHING SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSR14,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Transistor Type: NPN
• Frequency - Transition: 300MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 13
V
V
V
I
I
I
P
T
T
T
R
I
I
j
C
CM
BM
CBO
EBO
SYMBOL
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
= 25 °C unless otherwise specified.
NPN switching transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
collector cut-off current
collector cut-off current
emitter cut-off current
BSR13
BSR14
BSR13
BSR14
BSR13
BSR14
BSR13
BSR14
BSR13
BSR14
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
E
E
E
E
C
= 0; V
= 0; V
= 0; V
= 0; V
= 0; V
open emitter
open base
open collector
T
3
amb
CB
CB
CB
CB
EB
CONDITIONS
= 50 V
= 50 V; T
= 60 V
= 60 V; T
= 5 V
note 1
≤ 25 °C
CONDITIONS
CONDITIONS
j
j
= 150 °C
= 150 °C
−
−
−
−
−
−
−
−
−
−
−65
−
−65
−
−
−
−
−
−
MIN.
MIN.
VALUE
500
BSR13; BSR14
60
75
30
40
5
6
800
800
200
250
+150
150
+150
30
10
10
10
30
10
Product data sheet
MAX.
MAX.
UNIT
K/W
V
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
nA
µA
nA
µA
nA
nA
UNIT
UNIT