BSR14,215 NXP Semiconductors, BSR14,215 Datasheet - Page 4

• Manufacturer Part Number: BSR14,215
• Description: TRANSISTOR NPN SWITCHING SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSR14,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Transistor Type: NPN
• Frequency - Transition: 300MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

NXP Semiconductors
Note
1. Pulse test: t
2004 Jan 13
h
V
V
C
f
Switching times (between 10% and 90% levels); see Fig.2
t
t
t
t
t
t
T
on
d
r
off
s
f
SYMBOL
FE
CEsat
BEsat
NPN switching transistors
c
DC current gain
DC current gain
collector-emitter saturation voltage
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
p
BSR13
BSR14
BSR13
BSR14
BSR13
BSR14
BSR13
BSR14
BSR13
BSR14
BSR13
BSR14
≤ 300 µs; δ ≤ 0.02.
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
I
I
C
C
C
C
C
C
C
C
C
C
E
C
Con
Boff
= I
= 0.1 mA; V
= 1 mA; V
= 10 mA; V
= 150 mA; V
= 150 mA; V
= 500 mA; V
= 150 mA; I
= 500 mA; I
= 150 mA; I
= 500 mA; I
= 20 mA; V
= −15 mA
= 150 mA; I
e
= 0; V
4
CONDITIONS
CE
CB
CE
CE
B
B
B
B
CE
CE
CE
CE
= 10 V; note 1
= 10 V; f = 1 MHz
= 15 mA
= 50 mA
= 15 mA
= 50 mA
Bon
= 10 V; note 1
= 20 V;
= 10 V; note 1
= 10 V; note 1
= 1 V; note 1
= 10 V; note 1
= 15 mA;
35
50
75
100
50
30
40
−
−
−
−
−
0.6
−
−
−
250
300
−
−
−
−
−
−
MIN.
BSR13; BSR14
−
−
−
300
−
−
−
400
300
1 .6
1
1 .3
1.2
2 .6
2
8
−
−
35
15
20
250
200
60
MAX.
Product data sheet
mV
mV
V
V
V
V
V
V
pF
MHz
MHz
ns
ns
ns
ns
ns
ns
UNIT