PBSS4160V,115 NXP Semiconductors, PBSS4160V,115 Datasheet - Page 12
PBSS4160V,115
Manufacturer Part Number
PBSS4160V,115
Description
TRANS NPN 60V 1A LOW SAT SOT666
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PBSS4160V115.pdf
(14 pages)
Specifications of PBSS4160V,115
Package / Case
SS Mini-6 (SOT-666)
Transistor Type
NPN
Current - Collector (ic) (max)
900mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
250mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 500mA, 5V
Power - Max
500mW
Frequency - Transition
220MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Quad Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
500 mW
Maximum Operating Frequency
220 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934058118115
PBSS4160V T/R
PBSS4160V T/R
PBSS4160V T/R
PBSS4160V T/R
NXP Semiconductors
10. Revision history
Table 9.
PBSS4160V_3
Product data sheet
Document ID
PBSS4160V_3
Modifications:
PBSS4160V_2
PBSS4160V_1
Revision history
20040423
Release date
20091211
20050131
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 2 “Discrete
Figure 13 “Package outline
Rev. 03 — 11 December 2009
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
pinning”: updated
SOT666”: updated
60 V, 1 A NPN low V
Change notice
-
-
-
PBSS4160V
Supersedes
PBSS4160V_2
PBSS4160V_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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