PBSS4160V,115 NXP Semiconductors, PBSS4160V,115 Datasheet - Page 5

• Manufacturer Part Number: PBSS4160V,115
• Description: TRANS NPN 60V 1A LOW SAT SOT666
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4160V,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: NPN
• Current - Collector (ic) (max): 900mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 500 mW
• Maximum Operating Frequency: 220 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058118115; PBSS4160V T/R; PBSS4160V T/R

NXP Semiconductors
7. Characteristics
PBSS4160V_3
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
I
h
V
V
R
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
collector-base
cut-off current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
equivalent
on-resistance
base-emitter
turn-on voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency I
collector
capacitance
°
C unless otherwise specified.
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
Rev. 03 — 11 December 2009
Conditions
V
V
T
V
V
V
V
V
I
I
I
I
I
V
V
I
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
Bon
C
j
CB
CB
CE
EB
CE
CE
CE
CE
CC
CB
= 150 °C
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
= 50 mA; V
= 25 mA; I
= 5 V; I
= 60 V; I
= 60 V; I
= 60 V; V
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
= 10 V; I
B
B
B
C
= 100 mA
= 50 mA
= 100 mA
C
C
C
C
E
E
C
E
= 0 A
= 1 mA
= 500 mA
= 1 A
= 1 A
CE
BE
B
B
Boff
= 0 A
= 0 A;
= I
= 0.5 A;
= 1 mA
= 50 mA
= 0 V
= 10 V;
e
= −25 mA
60 V, 1 A NPN low V
= 0 A;
[1]
[1]
[1]
[1]
Min
-
-
-
-
250
200
100
-
-
-
-
-
-
-
-
-
-
-
-
150
-
PBSS4160V
CEsat
Typ
-
-
-
-
400
350
150
90
110
200
0.95
200
0.82
11
78
90
340
160
500
220
5.5
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
-
Max
100
50
100
100
-
-
-
110
140
250
1.1
250
0.9
-
-
-
-
-
-
10
Unit
nA
μA
nA
nA
mV
mV
mV
V
mΩ
V
ns
ns
ns
ns
ns
ns
MHz
pF
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