PBSS5350D,135 NXP Semiconductors, PBSS5350D,135 Datasheet - Page 5

• Manufacturer Part Number: PBSS5350D,135
• Description: TRANS PNP 50V 3A SOT457
• Manufacturer: NXP Semiconductors

Specifications of PBSS5350D,135

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 750mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934055946135; PBSS5350D /T3; PBSS5350D /T3

NXP Semiconductors
PBSS5350D
Product data sheet
Fig 1.
Fig 3.
h
(A)
I
1000
FE
C
800
600
400
200
–5
–4
–3
–2
–1
−10
0
0
0.0
current; typical values
collector-emitter voltage; typical values
V
(1) T
(2) T
(3) T
DC current gain as a function of collector
T
Collector current as a function of
amb
CE
I
−1
B
(mA) = –250
= -2 V
amb
amb
amb
= 25 °C
–0.4
−1
= 150 °C
= 25 °C
= -55 °C
–225
–200
−10
–0.8
(1)
(2)
(3)
−10
–1.2
–150
–100
–50
2
−10
–1.6
–175
–125
All information provided in this document is subject to legal disclaimers.
–75
–25
006aac606
3
I
V
C
CE
mgw167
(mA)
(V)
−10
–2.0
Rev. 5 — 23 March 2011
4
Fig 2.
Fig 4.
(mA)
–1000
V
–800
–600
–400
–200
I
(V)
C
−1.2
−0.8
−0.4
BE
−10
0
0
0.0
collector-emitter voltage; typical values
current; typical values
T
Collector current as a function of
V
(1) T
(2) T
(3) T
Base-emitter voltage as a function of collector
50 V, 3 A PNP low VCEsat (BISS) transistor
amb
CE
−1
= -2 V
amb
amb
amb
= 25 °C
–0.4
−1
I
B
= -55 °C
= 25 °C
= 150 °C
(nA) = –3.96
−10
–0.8
–3.30
–2.64
–1.98
–1.32
–0.66
(1)
(2)
(3)
−10
–1.2
PBSS5350D
–3.63
–2.97
–2.31
–1.65
–0.99
–0.33
2
−10
–1.6
© NXP B.V. 2011. All rights reserved.
006aac605
3
I
V
C
CE
mgw168
(mA)
(V)
−10
–2.0
4
5 of 12