PHE13005,127 NXP Semiconductors, PHE13005,127 Datasheet - Page 12

• Manufacturer Part Number: PHE13005,127
• Description: TRANS 400V 4A TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PHE13005,127

• Package / Case: TO-220AB-3
• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1V @ 1A, 4A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 2A, 5V
• Power - Max: 75W
• Mounting Type: Through Hole
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 12
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 700 V
• Maximum Dc Collector Current: 8 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055423127; PHE13005; PHE13005

NXP Semiconductors
10. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
8.2
8.3
8.4
9
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . . 11
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Silicon diffused power transistor
Date of release: 20 November 2009
PHE13005
Document identifier: PHE13005_3
All rights reserved.