PHE13005,127 NXP Semiconductors, PHE13005,127 Datasheet - Page 7

• Manufacturer Part Number: PHE13005,127
• Description: TRANS 400V 4A TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PHE13005,127

• Package / Case: TO-220AB-3
• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1V @ 1A, 4A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 2A, 5V
• Power - Max: 75W
• Mounting Type: Through Hole
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 12
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 700 V
• Maximum Dc Collector Current: 8 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055423127; PHE13005; PHE13005

NXP Semiconductors
PHE13005_3
Product data sheet
Fig 10. Base-emitter saturation voltage; typical values
Fig 12. Test circuit for resistive load switching
V
BEsat
(V)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
−1
V
t
IM
p
0
T
1
R
B
001aab989
I
C
V
(A)
CC
DUT
R
003aad541
L
Rev. 03 — 20 November 2009
10
Fig 11. DC current gain as a function of collector
Fig 13. Switching times waveforms for resistive load
90 %
10 %
h
FE
10
I
I
10
C
B
1
2
10
current; typical values
−2
t
r
≤ 30 ns
t
on
10
Silicon diffused power transistor
−1
−I
Boff
1 V
1
PHE13005
V
t
t
off
s
© NXP B.V. 2009. All rights reserved.
CE
I
I
Bon
C
003aad539
= 5 V
(A)
t
f
I
90 %
10 %
10
001aab990
Con
7 of 12
t
t