2SC4408(TE6,F,M) Toshiba, 2SC4408(TE6,F,M) Datasheet
2SC4408(TE6,F,M)
Manufacturer Part Number
2SC4408(TE6,F,M)
Description
TRANSISTOR NPN 50V 2A TO-92
Manufacturer
Toshiba
Datasheet
1.2SC4408TE6FM.pdf
(4 pages)
Specifications of 2SC4408(TE6,F,M)
Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 2V
Power - Max
900mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Power Amplifier Applications
Power Switching Applications
•
•
•
•
Maximum Ratings
Electrical Characteristics
Low saturation voltage: V
High collector power dissipation: P
High-speed switching: t
Complementary to 2SA1680
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Characteristics
Characteristics
Turn-on time
Storage time
Fall time
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
(Ta = 25°C)
stg
CE (sat)
= 500 ns (typ.)
(Ta = 25°C)
= 0.5 V (max) (I
C
V
V
V
= 900 mW
Symbol
Symbol
(BR) CEO
h
h
V
V
V
CE (sat)
BE (sat)
I
I
T
FE (1)
FE (2)
C
CBO
EBO
P
t
CBO
CEO
EBO
t
I
stg
I
T
f
stg
on
t
C
B
T
ob
C
f
j
2SC4408
V
V
I
V
V
I
I
V
V
I
C
C
C
B1
CB
EB
CE
CE
CE
CB
C
−55 to 150
= 10 mA, I
= 1 A, I
= 1 A, I
= −I
= 1 A)
Rating
= 6 V, I
20 µs
= 80 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 10 V, I
900
150
0.2
80
50
6
2
1
B2
B
B
= 0.05 A, duty cycle ≤ 1%
C
= 0.05 A
= 0.05 A
C
C
C
Test Condition
B
E
C
= 0
= 100 mA
= 1.5 A
= 100 mA
= 0
Input
= 0
= 0, f = 1 MHz
Unit
mW
°C
°C
V
V
V
A
A
I
I
B1
B2
Output
30 V
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
120
50
40
―
―
―
―
―
―
―
―
―
Typ.
100
0.1
0.5
0.1
14
―
―
―
―
―
―
―
TO-92MOD
2-5J1A
2004-07-26
2SC4408
―
Max
400
1.0
1.0
0.5
1.2
―
―
―
―
―
―
―
Unit: mm
MHz
Unit
µA
µA
pF
µs
V
V
V
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2SC4408(TE6,F,M) Summary of contents
Page 1
... TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications • Low saturation voltage 0.5 V (max (sat) • High collector power dissipation: P • High-speed switching 500 ns (typ.) stg • Complementary to 2SA1680 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage ...
Page 2
Marking C4408 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2SC4408 2004-07-26 ...
Page 3
I – 2 100 1.6 1.2 0.8 0 Common emitter Ta = 25° Collector-emitter voltage V ( – (sat) ...
Page 4
... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...