2SA1091-R(TPE2,F) Toshiba, 2SA1091-R(TPE2,F) Datasheet
2SA1091-R(TPE2,F)
Manufacturer Part Number
2SA1091-R(TPE2,F)
Description
TRANSISTOR PNP 300V 100MA TO-92
Manufacturer
Toshiba
Datasheet
1.2SA1091-RTPE2F.pdf
(4 pages)
Specifications of 2SA1091-R(TPE2,F)
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 20mA, 10V
Power - Max
400mW
Frequency - Transition
60MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
High voltage: V
Low saturation voltage: V
Small collector output capacitance: C
Complementary to 2SC2551.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Note: h
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE (1)
Characteristics
Characteristics
classification R: 30~90 O: 50~150
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
CBO
= −300 V, V
CE (sat)
CEO
(Ta = 25°C)
= −0.5 V (max)
(Ta = 25°C)
V
V
V
V
= −300 V
Symbol
Symbol
ob
(BR) CBO
(BR) CEO
h
h
V
V
V
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
T
CBO
EBO
C
P
CBO
CEO
EBO
I
I
T
f
stg
= 6 pF (typ.)
C
B
T
ob
C
2SA1091
j
(Note)
V
V
I
I
V
V
I
I
V
V
C
C
C
C
CB
EB
CE
CE
CE
CB
= −0.1 mA, I
= −1 mA, I
= −20 mA, I
= −20 mA, I
−55~150
Rating
= −300 V, I
= −8 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −20 V, I
−300
−300
−100
−20
400
150
−8
1
Test Condition
B
C
B
B
C
C
C
E
E
= 0
= 0
E
= −2 mA
= −2 mA
= 0, f = 1 MHz
= −20 mA
= −1 mA
= −20 mA
= 0
= 0
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
−300
−300
Min
30
20
40
⎯
⎯
⎯
⎯
⎯
Typ.
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
2-5F1B
TO-92
SC-43
2007-11-01
2SA1091
−0.1
−0.1
−0.5
−1.2
Max
150
⎯
⎯
⎯
⎯
8
Unit: mm
MHz
Unit
μA
μA
pF
V
V
V
V
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2SA1091-R(TPE2,F) Summary of contents
Page 1
... −20 mA − (sat −20 mA − (sat − − − MHz 2SA1091 JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Min Typ. Max ⎯ ⎯ −0.1 ⎯ ⎯ −0.1 −300 ⎯ ⎯ −300 ⎯ ⎯ ⎯ 30 150 ⎯ ⎯ 20 ⎯ ...
Page 2
... 2 2SA1091 2007-11-01 ...
Page 3
... 3 2SA1091 2007-11-01 ...
Page 4
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2SA1091 2007-11-01 ...