2SA1242-Y(Q) Toshiba, 2SA1242-Y(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SA1242-Y(Q)
• Description: TRANS PNP 20V 5A 2-7B1A
• Manufacturer: Toshiba

Specifications of 2SA1242-Y(Q)

• Transistor Type: PNP
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 170MHz
• Mounting Type: Through Hole
• Package / Case: 2-7B1A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

−0.05
−0.03
−0.5
−0.3
−0.1
−0.5
−0.3
−0.1
−10
−8
−6
−4
−2
−3
−1
−5
−3
−1
−0.01
−0.3
0
0
I C max (continuous)
* : Single nonrepetitive pulse
** : Pulse width = 10 ms (max)
Curves must be derated linearly
with increase in temperature.
I C max (pulsed)**
Common emitter
I C /I B = 40
Tc = 25°C
Duty cycle = 30％ (max)
−0.03
−150
−120
−100
Collector-emitter voltage V
Collector-emitter voltage V
−2
DC operation
Tc = 25°C
−1
−70
−50
Collector current I
−30
−20
Safe Operating Area
I B = −10 mA
−0.1
−4
V
CE (sat)
I
C
−3
0
−0.3
– V
Tc = 100°C
−6
CE
– I
V CEO max
C
C
Common emitter
Tc = 25°C
−1
−10
CE
CE
(A)
−8
1 ms*
100 ms*
10 ms*
(V)
(V)
−3
−25
−30
25
−10
−10
3
1000
500
300
100
50
30
10
−0.01
−8
−6
−4
−2
12
10
0
8
6
4
2
0
0
0
(1)
(2)
(3)
Common emitter
V CE = −2 V
−0.03
25
−0.4
Tc = 100°C
Base-emitter voltage V
Ambient temperature Ta (°C)
Collector current I
50
−0.1
−0.8
Tc = 100°C
V
h
75
P
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
(3) No heat sink
FE
BE
C
−0.3
−25
25
– Ta
50 × 50 × 0.8 mm
– I
−25
– I
−1.2
25
100
C
C
C
−1
BE
Common emitter
V CE = −2 V
125
−1.6
(A)
(V)
−3
150
−2.0
2010-08-27
2SA1242
−10
175