2SC5548(TE16L1,NQ) Toshiba, 2SC5548(TE16L1,NQ) Datasheet - Page 2

• Manufacturer Part Number: 2SC5548(TE16L1,NQ)
• Description: TRANSISTOR NPN 370V 2A PW-MOLD
• Manufacturer: Toshiba

Specifications of 2SC5548(TE16L1,NQ)

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 370V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100mA, 800mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 200mA, 5V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: PW-Mold
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Switching time
Characteristics
C5548
Rise time
Storage time
Fall time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
V
V
V
Symbol
(BR) CBO
(BR) CEO
h
h
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
CBO
EBO
t
stg
t
t
r
f
V
V
I
I
V
V
I
I
I
DUTY CYCLE ≤ 1%
C
C
C
C
B1
CB
EB
CE
CE
= 1 mA, I
= 10 mA, I
= 0.8 A, I
= 0.8 A, I
= 0.1 A, I
= 7 V, I
20 µs
= 480 V, I
= 5 V, I
= 5 V, I
2
C
E
B
B
C
C
INPUT
Test Condition
B2
B
= 0
= 0.1 A
= 0.1 A
I
= 0
= 1 mA
= 0.2 A
V
B2
E
= 0
CC
= −0.2 A
= 0
≈ 200 V
I
I
B21
B1
I
C
OUT-
PUT
Min
600
370
50
60
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Typ.
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2005-02-01
2SC5548
Max
120
120
1.0
1.3
0.5
3.0
0.3
20
10
―
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Unit
µA
µA
µs
V
V
V
V