2SD1409A(F) Toshiba, 2SD1409A(F) Datasheet

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2SD1409A(F)

Manufacturer Part Number
2SD1409A(F)
Description
TRANS NPN 400V 6A SC-67
Manufacturer
Toshiba
Datasheet

Specifications of 2SD1409A(F)

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
6A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
2V @ 40mA, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 4A, 2V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
SC-67
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
High Voltage Switching Applications
Absolute Maximum Ratings
Equivalent Circuit
Base
High DC current gain: h
Monolithic construction with built-in base-emitter shunt resistor
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
≈ 2.5 kΩ
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Ta = 25°C
Tc = 25°C
FE
= 600 (min.) (VCE = 2 V, I
≈ 200 Ω
(Ta = 25°C)
Symbol
V
V
V
2SD1409A
T
P
CBO
CEO
EBO
I
I
T
Collector
stg
C
B
Emitter
C
j
−55 to 150
C
Rating
= 2 A)
600
400
150
2.0
25
5
6
1
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
Industrial Applications
2-10R1A
2SD1409A
SC-67
2009-12-21
Unit: mm

Related parts for 2SD1409A(F)

2SD1409A(F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

... Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ...

Page 3

I – Common emitter Tc = 25° 0 Collector−emitter voltage – (sat ...

Page 4

Curves should be applied in thermal limited area. (Single nonrepetitive pulse 0.1 0.001 0.01 0.1 Pulse width t r – heat sink Infinite heat sink 1 10 100 ( 2SD1409A 1000 ...

Page 5

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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