BUT11APX,127 NXP Semiconductors, BUT11APX,127 Datasheet - Page 4

• Manufacturer Part Number: BUT11APX,127
• Description: TRANS NPN 1000V 5A SOT186A
• Manufacturer: NXP Semiconductors

Specifications of BUT11APX,127

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 600mA, 3A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 500mA, 5V
• Power - Max: 32W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 934055258127; BUT11APX; BUT11APX

Philips Semiconductors
September 1998
Fig. 7. Switching times waveforms with inductive load.
Silicon Diffused Power Transistor
IB
120
110
100
100
IC
90
80
70
60
50
40
30
20
10
10
Fig.9. Typical DC current gain. h
0
1
0.01
Fig. 8. Normalised power dissipation.
0
%
h
FE
PD% = 100 PD/PD
20
40
parameter V
Tj = 25 C
0.1
P tot
ts
60
toff
IBon
Ths / C
IC / A
80
25˚C
CE
with heatsink compound
Normalised Derating
100
1
= f (T
tf
1V
90 %
ICon
-IBoff
10 %
120
FE
hs
5V
)
= f(I
140
C
t
10
t
)
4
Solid lines = typ values, V
Solid lines = typ values, V
Solid lines = typ values, V
Fig.10. Collector-Emitter saturation voltage.
Fig.12. Collector-Emitter saturation voltage.
2.0
1.6
1.2
0.8
0.4
0.0
Fig.11. Base-Emitter saturation voltage.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.5
0.4
0.3
0.2
0.1
0.0
0.01
0.1
VCEsat/V
0
VBEsat/V
VCEsat/V
IC=1A
0.10
2A
IC/A
IB/A
1.0
IC/A
1
BEsat
CEsat
3A
CEsat
4A
= f(IC); at IC/IB =4.
= f(IC); at IC/IB =4.
1.00
= f(IB); T
Product specification
BUT11APX
j
=25˚C.
10
10.0
Rev 1.000
10.00