BUT11APX,127 NXP Semiconductors, BUT11APX,127 Datasheet - Page 6

• Manufacturer Part Number: BUT11APX,127
• Description: TRANS NPN 1000V 5A SOT186A
• Manufacturer: NXP Semiconductors

Specifications of BUT11APX,127

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 600mA, 3A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 500mA, 5V
• Power - Max: 32W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 934055258127; BUT11APX; BUT11APX

Philips Semiconductors
September 1998
Fig.16. Forward bias safe operating area. T
Silicon Diffused Power Transistor
(1)
(2)
I
II
III
NB:
0.01
100
0.1
10
1
1
IC / A
ICM max
IC max
P
Second breakdown limits.
Region of permissible DC operation.
Extension for repetitive pulse operation.
Extension during turn-on in single
transistor converters provided that
R
Mounted with heatsink compound and
30
envelope.
tot
BE
max and P
5 newton force on the centre of the
100
10
(1)
I
and t
= 0.01
tot
peak max lines.
100
p
(2)
II
0.6 s.
V
CE
/ V
III
1000
tp =
100 us
1 ms
10 ms
500 ms
DC
hs
10 us
25 ˚C
6
Product specification
BUT11APX
Rev 1.000