2N5551,412 NXP Semiconductors, 2N5551,412 Datasheet - Page 2

• Manufacturer Part Number: 2N5551,412
• Description: TRANSISTOR NPN 160V 300MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of 2N5551,412

• Transistor Type: NPN
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 630mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2N5551P; 2N5551P; 933215530412

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complements: 2N5400 and 2N5401.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Oct 28
2N5550
2N5551
V
V
V
I
I
I
P
T
T
T
C
CM
BM
TYPE NUMBER
SYMBOL
Low current (max. 300 mA)
High voltage (max. 160 V).
Switching and amplification in high voltage applications
such as telephony.
stg
j
amb
CBO
CEO
EBO
tot
NPN high-voltage transistors
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
2N5550
2N5551
2N5550
2N5551
SC-43A
NAME
PARAMETER
plastic single-ended leaded (through hole) package; 3 leads
open emitter
open base
open collector
T
amb
2
25 C
PINNING
CONDITIONS
handbook, halfpage
DESCRIPTION
PACKAGE
Fig.1
PIN
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
1
2
collector
base
emitter
3
65
65
MIN.
DESCRIPTION
2N5550; 2N5551
Product specification
160
180
140
160
6
300
600
100
630
+150
150
+150
MAM279
MAX.
2
VERSION
SOT54
V
V
V
V
V
mA
mA
mA
mW
C
C
C
UNIT
1
3