PDTB113ET,215 NXP Semiconductors, PDTB113ET,215 Datasheet - Page 4

• Manufacturer Part Number: PDTB113ET,215
• Description: TRANS PNP W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTB113ET,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 33 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 1 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058978215; PDTB113ET T/R; PDTB113ET T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PDTB113E_SER_2
Product data sheet
Table 7.
[1]
Table 8.
T
Symbol
R
Symbol Parameter
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
th(j-a)
c
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
= 25
°
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input
voltage
on-state input
voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance V
C unless otherwise specified.
Thermal characteristics
Characteristics
Parameter
thermal resistance
from junction to
ambient
SOT346
SOT54
SOT23
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 — 16 November 2009
Conditions
V
V
V
V
V
I
V
V
I
f = 100 MHz
C
C
CB
CB
CE
EB
CE
CE
CE
CB
= −50 mA; I
= −20 mA
= −5 V; I
= −40 V; I
= −50 V; I
= −50 V; I
= −5 V; I
= −5 V; I
= −0.3 V;
= −10 V; I
Conditions
in free air
C
C
C
E
E
E
B
B
= 0 A
= −50 mA
= −100 μA
= i
= −2.5 mA
= 0 A
= 0 A
= 0 A
e
= 0 A;
PDTB113E series
[1]
Min
-
-
-
Min
-
-
-
-
33
-
−0.6
−1.0
0.7
0.9
-
Typ
-
-
-
Typ
-
-
-
-
-
-
−1.1
−1.4
1.0
1.0
11
© NXP B.V. 2009. All rights reserved.
Max
500
250
500
Max
−100
−100
−0.5
−4.0
-
−0.3
−1.5
−1.8
1.3
1.1
-
K/W
K/W
K/W
Unit
Unit
nA
nA
μA
mA
mV
V
V
kΩ
pF
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