PDTB113ET,215 NXP Semiconductors, PDTB113ET,215 Datasheet - Page 6

• Manufacturer Part Number: PDTB113ET,215
• Description: TRANS PNP W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTB113ET,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 33 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 1 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058978215; PDTB113ET T/R; PDTB113ET T/R

NXP Semiconductors
8. Package outline
PDTB113E_SER_2
Product data sheet
Fig 5.
Fig 7.
Fig 9.
3.0
2.5
4.2
3.6
4.8
4.4
Dimensions in mm
Dimensions in mm
1.7
1.3
Package outline SOT346 (SC-59A/TO-236)
Package outline SOT54A
Package outline SOT23 (TO-236AB)
1
5.2
5.0
3 max
3.1
2.7
1.9
3
14.5
12.7
2.5
2.1
Dimensions in mm
2
0.50
0.35
1.4
1.2
0.6
0.2
1
1
2
3
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
0.48
0.40
Rev. 02 — 16 November 2009
2.54
0.26
0.10
0.45
0.38
1.3
1.0
04-11-11
04-06-28
5.08
1.9
3.0
2.8
3
Fig 6.
Fig 8.
4.2
3.6
4.8
4.4
4.2
3.6
4.8
4.4
Dimensions in mm
Dimensions in mm
2
0.48
0.38
Package outline SOT54 (SC-43A/TO-92)
Package outline SOT54 variant
0.45
0.15
5.2
5.0
5.2
5.0
1.1
0.9
0.15
0.09
PDTB113E series
04-11-04
max
2.5
14.5
12.7
14.5
12.7
© NXP B.V. 2009. All rights reserved.
1
2
3
1
2
3
0.45
0.38
0.48
0.40
0.48
0.40
1.27
1.27
0.45
0.38
1.27
04-11-16
05-01-10
2.54
2.54
6 of 10