PDTB113ET,215 NXP Semiconductors, PDTB113ET,215 Datasheet - Page 5

TRANS PNP W/RES 50V SOT-23

PDTB113ET,215

Manufacturer Part Number
PDTB113ET,215
Description
TRANS PNP W/RES 50V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTB113ET,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
1K
Resistor - Emitter Base (r2) (ohms)
1K
Dc Current Gain (hfe) (min) @ Ic, Vce
33 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
1 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
500 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058978215
PDTB113ET T/R
PDTB113ET T/R
NXP Semiconductors
PDTB113E_SER_2
Product data sheet
Fig 1.
Fig 3.
V
−10
(V)
I(on)
h
10
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−10
10
FE
10
10
−1
−1
−1
−10
−10
3
2
1
V
DC current gain as a function of collector
current; typical values
V
On-state input voltage as a function of
collector current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
= −5 V
= −0.3 V
= 100 °C
= 25 °C
= −40 °C
= −40 °C
= 25 °C
= 100 °C
−1
−1
(1)
(2)
(3)
−10
−10
(1)
(2)
(3)
−10
−10
2
2
I
I
006aaa345
C
006aaa347
C
(mA)
(mA)
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 — 16 November 2009
−10
−10
3
3
Fig 2.
Fig 4.
V
V
−10
−10
−10
CEsat
(V)
(V)
I(off)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−10
−1
−1
−2
−1
−10
−10
I
Collector-emitter saturation voltage as a
function of collector current; typical values
V
Off-state input voltage as a function of
collector current; typical values
C
−1
amb
amb
amb
amb
amb
amb
CE
/I
B
(1)
(2)
(3)
= −5 V
= 20
= 100 °C
= 25 °C
= −40 °C
= −40 °C
= 25 °C
= 100 °C
PDTB113E series
−10
−1
2
(1)
(2)
(3)
I
I
C
C
(mA)
(mA)
© NXP B.V. 2009. All rights reserved.
006aaa346
006aaa348
−10
−10
3
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