PDTA113EM,315 NXP Semiconductors, PDTA113EM,315 Datasheet - Page 11

• Manufacturer Part Number: PDTA113EM,315
• Description: TRANS PNP W/RES 50V SOT-883
• Manufacturer: NXP Semiconductors

Specifications of PDTA113EM,315

• Package / Case: SC-101, SOT-883
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 40mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 1 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058825315; PDTA113EM T/R; PDTA113EM T/R

NXP Semiconductors
Fig 9.
PDTA113E_SER_5
Product data sheet
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch)
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
Package outline SOT54A
VERSION
OUTLINE
SOT54A
D
5.2
5.0
A
d
0.48
0.40
b
E
3
1
2
0.66
0.55
b 1
IEC
b 1
0.45
0.38
c
4.8
4.4
D
JEDEC
1.7
1.4
d
REFERENCES
Rev. 05 — 2 September 2009
0
4.2
3.6
E
A
5.08
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
e
JEITA
scale
2.5
2.54
e 1
14.5
12.7
5 mm
L
L 2
L 1
L
max.
1
3
(1)
PDTA113E series
L 2
3
2
L
PROJECTION
EUROPEAN
© NXP B.V. 2009. All rights reserved.
b
ISSUE DATE
c
97-05-13
04-06-28
e 1
e
SOT54A
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