PDTA113EM,315 NXP Semiconductors, PDTA113EM,315 Datasheet - Page 9

• Manufacturer Part Number: PDTA113EM,315
• Description: TRANS PNP W/RES 50V SOT-883
• Manufacturer: NXP Semiconductors

Specifications of PDTA113EM,315

• Package / Case: SC-101, SOT-883
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 40mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 1 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058825315; PDTA113EM T/R; PDTA113EM T/R

NXP Semiconductors
Fig 7.
PDTA113E_SER_5
Product data sheet
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
UNIT
mm
Package outline SOT883 (SC-101)
VERSION
OUTLINE
SOT883
A
0.50
0.46
(1)
max.
0.03
e
A
1
b
0.20
0.12
2
1
b
IEC
0.55
0.47
b
1
L
0.62
0.55
D
1.02
0.95
E
JEDEC
e 1
E
0.35
e
REFERENCES
Rev. 05 — 2 September 2009
0.65
e
1
L 1
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
0.30
0.22
SC-101
L
JEITA
3
0.30
0.22
L
A 1
D
1
b 1
A
0
PDTA113E series
PROJECTION
EUROPEAN
scale
0.5
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
03-02-05
03-04-03
1 mm
SOT883
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