PDTA113EM,315 NXP Semiconductors, PDTA113EM,315 Datasheet - Page 4

• Manufacturer Part Number: PDTA113EM,315
• Description: TRANS PNP W/RES 50V SOT-883
• Manufacturer: NXP Semiconductors

Specifications of PDTA113EM,315

• Package / Case: SC-101, SOT-883
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 40mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 1 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058825315; PDTA113EM T/R; PDTA113EM T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
PDTA113E_SER_5
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 7.
[1]
[2]
[3]
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
O
CM
stg
j
amb
CBO
CEO
EBO
I
tot
th(j-a)
Refer to standard mounting conditions
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 m copper strip line.
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 m copper strip line.
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
Parameter
thermal resistance from
junction to ambient
positive
negative
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Rev. 05 — 2 September 2009
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
Conditions
open emitter
open base
open collector
T
Conditions
in free air
amb
25 C
PDTA113E series
[2][3]
[2][3]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
-
-
-
65
65
Typ
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
+10
150
250
250
500
250
200
+150
150
+150
50
50
10
10
100
100
Max
833
500
500
250
500
625
Unit
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
C
C
C
Unit
K/W
K/W
K/W
K/W
K/W
K/W
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