PDTD113ZT,215 NXP Semiconductors, PDTD113ZT,215 Datasheet - Page 3

• Manufacturer Part Number: PDTD113ZT,215
• Description: TRANS NPN W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTD113ZT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 1 KOhms
• Typical Resistor Ratio: 10
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 5 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058981215; PDTD113ZT T/R; PDTD113ZT T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PDTD113ZT_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6.
[1]
Table 7.
T
Symbol
P
T
T
T
Symbol
R
Symbol
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
j
amb
stg
tot
CEsat
I(off)
I(on)
th(j-a)
c
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
= 25 C unless otherwise specified.
Limiting values
Thermal characteristics
Characteristics
Parameter
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
NPN 500 mA resistor-equipped transistor; R1 = 1 k , R2 = 10 k
Rev. 02 — 23 March 2009
…continued
Conditions
V
V
V
V
V
I
V
V
V
f = 100 MHz
C
CB
CB
CE
EB
CE
CE
CE
CB
= 50 mA; I
= 5 V; I
= 40 V; I
= 50 V; I
= 50 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
Conditions
T
Conditions
in free air
amb
C
C
C
E
E
B
B
E
= 0 A
25 C
= 50 mA
= 100 A
C
= 2.5 mA
= 0 A
= 0 A
= 0 A
= i
= 20 mA
e
= 0 A;
[1]
[1]
Min
-
-
Min
-
Min
-
-
-
-
70
-
0.3
0.4
0.7
9
-
65
65
PDTD113ZT
Typ
-
Typ
-
-
-
-
-
-
0.6
0.8
1
10
7
© NXP B.V. 2009. All rights reserved.
Max
250
150
+150
+150
Max
500
Max
100
100
0.5
0.8
-
0.3
1
1.4
1.3
11
-
Unit
mW
C
C
C
Unit
K/W
Unit
nA
nA
mA
V
V
V
k
pF
A
3 of 9