JDV2S29SC(TPL3) Toshiba, JDV2S29SC(TPL3) Datasheet
JDV2S29SC(TPL3)
Manufacturer Part Number
JDV2S29SC(TPL3)
Description
DIODE VAR 10V UHF 0603 1-1R1A
Manufacturer
Toshiba
Datasheet
1.JDV2S29SCTPL3.pdf
(3 pages)
Specifications of JDV2S29SC(TPL3)
Capacitance @ Vr, F
1.37pF @ 4V, 1MHz
Capacitance Ratio
2.92
Capacitance Ratio Condition
C1/C4
Voltage - Peak Reverse (max)
10V
Diode Type
Single
Mounting Type
Surface Mount
Package / Case
2-SC2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Q @ Vr, F
-
VCO for UHF Band Radio
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Marking
High Capacitance Ratio : C
Low Series Resistance : r
A two-terminal ultra-small package supports high-density mounting
and the downsizing of end products
Reverse voltage
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Note: Signal level when capacitance is measured: V
1
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristic
Characteristic
2
s
1V
= 0.64 ohm (typ.)
TOSHIBA Diode Silicon Epitaxial Planar Type
/C
4V
(Ta = 25°C)
= 2.8 (typ.)
(Ta = 25°C)
JDV2S29SC
Symbol
T
V
T
stg
C
R
Symbol
j
1V
C
C
V
I
r
R
1V
4V
/C
s
R
4V
sig
-55~150
I
V
V
V
V
Rating
R
R
R
R
R
150
= 100 mVrms
10
= 1 μA
1
= 6 V
= 1 V, f = 1 MHz
= 4V, f = 1 MHz
= 1 V, f = 470 MHz
Test Condition
Unit
⎯
°C
°C
V
)Weight: 0.00017 g (typ.)
２
１
JEDEC
JEITA
TOSHIBA
SC2
0.32±0.03
3.54
1.22
2.73
Min
10
⎯
⎯
Typ.
0.64
⎯
⎯
⎯
⎯
⎯
JDV2S29SC
1-1R1A
1. Cathode
2. Anode
2007-12-10
１：カソード
２：アノード
⎯
⎯
3.83
1.37
2.92
0.75
Max
⎯
1
0.27±0.02
Unit: mm
Unit
nA
pF
⎯
Ω
V
0.025±0.0
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JDV2S29SC(TPL3) Summary of contents
Page 1
... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
Page 2
C – 0 REVERSE VOLTAGE V R (V) 1.0 f =1MHz 0.8 Ta=25 ℃ 0.6 0.4 0.2 0.0 0 JDV2S29SC r – ...
Page 3
... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...