PIC16F1937T-I/MV Microchip Technology, PIC16F1937T-I/MV Datasheet - Page 391
![14KB Flash, 512B RAM, 256B EEPROM, LCD, 1.8-5.5V 40 UQFN 5x5x0.5mm T/R](/photos/16/12/161286/qfn44_sml.jpg)
PIC16F1937T-I/MV
Manufacturer Part Number
PIC16F1937T-I/MV
Description
14KB Flash, 512B RAM, 256B EEPROM, LCD, 1.8-5.5V 40 UQFN 5x5x0.5mm T/R
Manufacturer
Microchip Technology
Series
PIC® XLP™ 16Fr
Datasheet
1.PIC16F1937-EMV.pdf
(472 pages)
Specifications of PIC16F1937T-I/MV
Processor Series
PIC16F
Core
PIC
Program Memory Type
Flash
Program Memory Size
14 KB
Data Ram Size
256 B
Interface Type
MI2C, SPI, EUSART
Number Of Timers
5
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
UQFN-40
Development Tools By Supplier
MPLAB IDE Software
Minimum Operating Temperature
- 40 C
Core Processor
PIC
Core Size
8-Bit
Speed
32MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LCD, POR, PWM, WDT
Number Of I /o
36
Eeprom Size
256 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 14x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Lead Free Status / Rohs Status
Details
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30.5
2008-2011 Microchip Technology Inc.
DC CHARACTERISTICS
D110
D111
D112
D113
D114
D115
D116
D117
D118
D119
D120
D121
D122
D123
D124
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
Memory Programming Requirements
V
I
V
I
I
E
V
T
T
T
E
V
T
T
DDP
PPPGM
DDPGM
Sym.
RETD
REF
IW
RETD
PEW
DEW
IHH
D
DRW
P
PR
only and are not tested.
Self-write and Block Erase.
Refer to
endurance.
Required only if single-supply programming is disabled.
The MPLAB ICD 2 does not support variable V
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
V
V
Current on MCLR/V
Write
Current on V
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
Self-timed Write Cycle Time
Characteristic Retention
DD
DD
DD
DD
Section 11.2 “Using the Data EEPROM”
for Bulk Erase
for Write or Row Erase
for Read/Write
for Read
Characteristic
DD
during Erase/Write
PP
PP
during Erase/
/RE3 pin
(2)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
100K
Min.
min.
min.
10K
min.
V
V
V
8.0
1M
2.7
—
—
—
—
—
—
—
DD
DD
DD
PP
output. Circuitry to limit the ICD 2 V
for a more detailed discussion on data EEPROM
Typ†
10M
4.0
40
40
—
—
—
—
—
—
—
—
—
2
PIC16(L)F1934/6/7
Max.
max.
max.
max.
max.
V
V
V
V
9.0
5.0
2.5
1.0
5.0
10
—
—
—
—
—
DD
DD
DD
DD
Units
Year
Year
E/W
E/W
E/W
mA
mA
mA
ms
ms
A
V
V
V
V
V
+125°C
(Note 3, Note 4)
-40C to +85C
Provided no other
specifications are violated
-40°C to +85°C
-40C to +85C (Note 1)
Provided no other
specifications are violated
PP
voltage must be
Conditions
DS41364E-page 391
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