STM32F100RET6B STMicroelectronics, STM32F100RET6B Datasheet - Page 59
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STM32F100RET6B
Manufacturer Part Number
STM32F100RET6B
Description
16/32-BITS MICROS
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32F100RCT6TR.pdf
(97 pages)
Specifications of STM32F100RET6B
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
24MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
51
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32F100RET6B
Manufacturer:
NXP
Quantity:
11 430
Company:
Part Number:
STM32F100RET6B
Manufacturer:
STMicroelectronics
Quantity:
10 000
Company:
Part Number:
STM32F100RET6BTR
Manufacturer:
STMicroelectronics
Quantity:
10 000
STM32F100xC, STM32F100xD, STM32F100xE
Figure 18. Asynchronous multiplexed PSRAM/NOR write waveforms
Table 33.
1. C
2. Preliminary values.
t
t
t
t
t
t
t
t
t
t
t
t
t
w(NE)
v(NWE_NE)
w(NWE)
h(NE_NWE)
v(A_NE)
v(NADV_NE)
w(NADV)
h(AD_NADV)
h(A_NWE)
v(BL_NE)
h(BL_NWE)
v(Data_NADV)
h(Data_NWE)
Symbol
L
= 15 pF.
FSMC_NBL[1:0]
FSMC_ AD[15:0]
FSMC_A[25:16]
FSMC_NADV
FSMC_NWE
FSMC_NOE
FSMC_NEx
Asynchronous multiplexed PSRAM/NOR write timings
FSMC_NE low time
FSMC_NEx low to FSMC_NWE low
FSMC_NWE low time
FSMC_NWE high to FSMC_NE high hold time
FSMC_NEx low to FSMC_A valid
FSMC_NEx low to FSMC_NADV low
FSMC_NADV low time
FSMC_AD (address) valid hold time after
FSMC_NADV high
Address hold time after FSMC_NWE high
FSMC_NEx low to FSMC_BL valid
FSMC_BL hold time after FSMC_NWE high
FSMC_NADV high to Data valid
Data hold time after FSMC_NWE high
Doc ID 15081 Rev 5
Parameter
t
v(NADV_NE)
t
t
t
v(A_NE)
v(A_NE)
t
t
v(NWE_NE)
v(BL_NE)
w(NADV)
Address
Address
t
t
t
v(Data_NADV)
w(NE)
h(AD_NADV)
NBL
t
w(NWE)
t
h(BL_NWE)
t
h(A_NWE)
Data
5T
2T
2T
T
3
T
T
4T
T
T
HCLK
HCLK
HCLK
HCLK
HCLK
HCLK
HCLK
HCLK
HCLK
Min
Electrical characteristics
– 1
– 1
– 3
– 1.5
– 5
– 1
– 1
(1)(2)
t
5T
2T
2T
7
5
T
1.6
T
h(Data_NWE)
t
HCLK
HCLK
h(NE_NWE)
HCLK
HCLK
HCLK
Max
+ 1
+ 1.5
+ 2
+ 1
+ 2
ai14891B
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
59/97