TDA6111Q NXP Semiconductors, TDA6111Q Datasheet - Page 11

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TDA6111Q

Manufacturer Part Number
TDA6111Q
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of TDA6111Q

Single Supply Voltage (typ)
Not RequiredV
Single Supply Voltage (min)
Not RequiredV
Single Supply Voltage (max)
Not RequiredV
Mounting
Through Hole
Lead Free Status / RoHS Status
Compliant

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TEST AND APPLICATION INFORMATION
Dissipation
Regarding dissipation, distinction must first be made
between static dissipation (independent of frequency) and
dynamic dissipation (proportional to frequency).
The static dissipation of the TDA6111Q is due to high and
low voltage supply currents and load currents in the
feedback network and CRT.
The static dissipation equals:
R
I
With V
other typical conditions as mentioned in Chapter
“Characteristics”, the static dissipation P
1995 Feb 07
P
oc
fb
stat
Video output amplifier
= DC value of cathode current.
= value of feedback resistor.
=
fb
V
= V
+
DDL
V
oc
oc
= 100 V, R
I
DDL
I
oc
+
V
V
fb
DDH
fb
= 68 k , I
------- -
R
V
fb
fb
I
DDH
oc
= 0.6 mA and
stat
= 2.0 W.
11
The dynamic dissipation equals:
P
With C
(simulation of worst-case noise), V
The IC must be mounted on the picture tube base print to
minimize the load capacitance (C
The total power dissipation, P
amounts to 3.6 W under given conditions.
From T
the package and heatsink together must be < 24 K/W.
dyn
= 80% then P
C
C
C
f
V
i
o(p-p)
L
fb
int
= input frequency.
= non-blanking duty-cycle ( 0.8).
= V
= load capacitance.
= feedback capacitance ( 150 fF).
= internal load capacitance ( 4 pF).
L
j
DDH
= 10 pF, C
= T
= output voltage (peak-to-peak value).
amb
(C
dyn
+ P
L
+ C
= 1.8 W
fb
tot
= 0, C
fb
R
+ C
th j-a
int
int
)
< T
= 4 pF, f
tot
= P
f
j(max)
Preliminary specification
i
L
).
o(p-p)
stat
V
o(p-p)
i
= 150 C, R
TDA6111Q
= 8 MHz
+ P
= 100 V and
dyn
thus
th j-a
of

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