TDA6111Q NXP Semiconductors, TDA6111Q Datasheet - Page 6

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TDA6111Q

Manufacturer Part Number
TDA6111Q
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of TDA6111Q

Single Supply Voltage (typ)
Not RequiredV
Single Supply Voltage (min)
Not RequiredV
Single Supply Voltage (max)
Not RequiredV
Mounting
Through Hole
Lead Free Status / RoHS Status
Compliant

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Philips Semiconductors
CHARACTERISTICS
Operating range: T
V
Test conditions (unless otherwise specified): T
(C
1995 Feb 07
SYMBOL
I
I
I
I
I
V
V
V
GB
B
B
t
t
t
t
SR
----------- -
DDH
DDL
bias
offset
om(offset)
pd
r
f
s
om
offset
oc(min)
oc(max)
S
L
L
Video output amplifier
I
I
om
oc
consists of parasitic and cathode capacitance); R
= 1.4 V to V
quiescent HIGH voltage supply current V
quiescent LOW voltage supply current V
input bias current
input offset current
offset current of measurement output
linearity of current transfer
input offset voltage
minimum output voltage
maximum output voltage
gain-bandwidth product of open-loop
gain: V
small signal bandwidth
large signal bandwidth
cathode output propagation delay time
50% input to 50% output
cathode output rise time 10% output to
90% output
cathode output fall time 90% output to
10% output
settling time 50% input to
(99% < output < 101%)
slew rate between 50 V to 150 V
DDL
amb
fb
.
/ V
= 20 to 65 C; V
i, dm
PARAMETER
DDH
= 180 to 210 V; V
amb
= 25 C; V
V
V
I
1.4 V < V
1.4 V < V
V
V
V
f = 500 kHz; V
V
V
V
V
V
V
wave; f < 1 MHz;
t
see Figs 4 and 5
V
wave; f < 1 MHz; t
see Fig.4
V
wave; f < 1 MHz; t
see Fig.5
V
V
wave; f < 1 MHz;
t
see Figs 4 and 5
V
wave; f < 1 MHz;
t
th-heatsink
oc
r
r
r
1.0 V < V
10 A < I
1.0 V < V
oc
oc
oc
oc
oc
1 3
1 3
ocAC
ocDC
ocAC
ocDC
ocAC
ocDC
oc
oc
ocAC
ocDC
1 3
= t
= t
= t
= 0 A;
= 0.5V
= 0.5V
= 0.5V
= 0.5V
= 0.5V
= 50 to 150 V square
= 150 to 50 V square
f
f
f
= 1 V
= 1 V
= 2 V (p-p) square
= 22 ns;
= 22 ns;
= 22 ns
6
= 60 V (p-p);
= 100 V (p-p);
= 100 V (p-p);
= 100 V (p-p);
= 100 V
= 100 V
= 100 V square
= 100 V square
CONDITIONS
DDH
DDL
= 10 K/W; measured in test circuit Fig.3.
om
om
oc
DDH
DDH
DDH
DDH
1 3
1 3
DDH
= 200 V; V
< V
< V
< 3 mA;
= 10.8 to 13.2 V; V
< 1.0 V;
< 1.0 V;
ocDC
DDL
DDL
f
r
= 22 ns;
= 22 ns;
= 100 V
DDL
= 12 V; V
7.0
5.0
0
0.9
V
13
10
17
23
23
6
10
50
DDH
ip
MIN.
= 2.6 to 5 V;
ip
12
= 5 V; V
9.0
6.8
0
1.0
1.6
16
13
23
30
30
3000
Preliminary specification
TYP.
om
TDA6111Q
= 6 V; C
11.0
8.0
40
+6
+10
1.1
+50
20
29
36
36
350
MAX.
L
= 10 pF
mA
mA
mV
V
V
GHz
MHz
MHz
ns
ns
ns
ns
V/ s
UNIT
A
A
A

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