TZA3033T/C3,112 NXP Semiconductors, TZA3033T/C3,112 Datasheet - Page 9
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TZA3033T/C3,112
Manufacturer Part Number
TZA3033T/C3,112
Description
Manufacturer
NXP Semiconductors
Datasheet
1.TZA3033TC3112.pdf
(28 pages)
Specifications of TZA3033T/C3,112
Operating Temperature (min)
-40C
Operating Temperature (max)
85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Compliant
Philips Semiconductors
CHARACTERISTICS
For typical values T
temperature range and process spread; all voltages are measured with respect to ground; unless otherwise specified.
2002 Sep 06
V
I
P
T
T
R
f
PSRR
Bias voltage: pin DREF
R
Input: pin IPhoto
V
I
R
I
SYMBOL
CC
i(IPhoto)(p-p)
n(tot)
j
amb
CC
tot
bias(IPhoto)
tr
3dB(h)
DREF
i
SDH/SONET STM1/OC3
transimpedance amplifier
supply voltage
supply current
total power dissipation
junction temperature
ambient temperature
small-signal transresistance
of the receiver
high frequency 3 dB point
power supply rejection ratio
resistance between pins
DREF and V
input bias voltage on
pin IPhoto
input current on pin IPhoto
(peak-to-peak value)
small-signal input resistance
total integrated RMS noise
current over bandwidth
(referenced to input)
amb
PARAMETER
= 25 C and V
CC
CC
= 5 V; minimum and maximum values are valid over the entire ambient
AC coupled; R
V
V
AC coupled; measured
differentially
AC coupled; measured
differentially; C
R
measured differentially;
note 1
DC tested
note 2
f
input current < 0.5 A
i
f = 90 MHz; note 3
CC
CC
L
= 1 MHz;
V
V
R
R
T
T
f = 100 kHz to 10 MHz
f = 100 MHz
V
V
= 50
j
j
CC
CC
CC
CC
L
L
= 5 V
= 3.3 V
= 125 C
= 100 C
=
= 50
CONDITIONS
= 5 V
= 3.3 V
= 5 V
= 3.3 V
9
L
i
= 0.7 pF;
= 50
3
20
20
100
60
42
21
90
100
210
800
0
0
40
40
MIN.
5
38
35
190
116
+25
90
45
130
130
0.5
10
245
1050
1
1
330
16
TYP.
Product specification
5.5
60
50
330
180
+125
+85
112
66
290
1300
1800
1600
MAX.
TZA3033
V
mA
mA
mW
mW
k
k
MHz
MHz
mV
nA
UNIT
C
C
A/V
A/V
A
A