TDA8351N6 NXP Semiconductors, TDA8351N6 Datasheet - Page 6

• Manufacturer Part Number: TDA8351N6
• Manufacturer: NXP Semiconductors

Specifications of TDA8351N6

• Lead Free Status / RoHS Status: Compliant

Philips Semiconductors
CHARACTERISTICS
V
specified.
1999 Sep 27
DC supply
V
V
I
Vertical circuit
V
LE
V
V
V
G
V
f
G
I
I
PSRR
V
V
I
I
I
V
P
res
I(sb)
FB
bias
O(CM)
P
SYMBOL
os
V
G
P
FB
O
O
DF
O(A)
R
I(DC)
I(CM)
DC-coupled vertical deflection circuit
vo
I
os
= 17.5 V; T
os
c
T
T
operating supply voltage
flyback supply voltage
supply current
output voltage swing (scan)
linearity error
output voltage swing (flyback)
V
forward voltage of the internal
efficiency diode (V
output offset current
offset voltage at the input of the
feedback amplifier (V
output offset voltage as a function
of temperature
DC output voltage
open-loop voltage gain (V
open loop voltage gain
(V
voltage ratio V
frequency response ( 3 dB)
current gain (I
current gain drift as a function of
temperature
signal bias current
flyback supply current
power supply ripple rejection
DC input voltage
common mode input voltage
input bias current
common mode output current
amb
O(A)
7-4
= 25 C; V
/V
9-4
V
O(B)
; V
PARAMETER
1-2
O
1-2
FB
= 0)
/I
diff
/V
= 45 V; f
O(A)
)
9-4
I(fb)
V
7-4
i
FB
V
= 50 Hz; I
)
O(B)
/V
1-2
)
) notes 4 and 5
note 1
no signal; no load
I
V
I
I
I
I
I
I
I
I
I
I
I
I
I
note 4
open loop; note 6
during scan
note 7
I
I
f
diff
O
O
O
diff
O
O
diff
diff
I(sb)
diff
I(sb)
diff
diff
I(sb)
I(sb)
i
I(sb)
I
diff
= 50 Hz; I
I(sb)
= 3 A (p-p)
= 3 A (p-p); note 2
= 50 mA (p-p); note 2
= 1.5 A
= 1.5 A;
= 0.6 mA (p-p);
= 0.3 mA;
= 0.3 mA
= 0;
= 0;
= 0
= 0; note 3
= 1.8 V (p-p);
= 50 to 500 A
= 50 to 500 A
= 0
= 0
= 400 A; measured in test circuit of Fig.3; unless otherwise
CONDITIONS
= 300 A (p-p);
6
diff
= 0
9.0
V
V
19.8
50
0
P
P
MIN.
30
1
1
39
8.0
80
80
0
40
5000
400
80
2.7
0.1
0.2
TYP.
Product specification
25
50
60
55
3
3
1.5
30
18
72
10
500
100
1.6
0.5
TDA8351
MAX.
4
V
V
V
mA
V
%
%
V
V
mA
mV
V
dB
dB
dB
Hz
K
dB
V
V
mA
UNIT
V/K
A
A
A