MT49H32M9FM-33 IT Micron Technology Inc, MT49H32M9FM-33 IT Datasheet - Page 46

• Manufacturer Part Number: MT49H32M9FM-33 IT
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H32M9FM-33 IT

• Organization: 32Mx9
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 300MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 609mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Not Compliant

Figure 19:
PDF: 09005aef80a41b46/Source: 09005aef809f284b
RLDRAM_II_CIO_Core.fm - Rev. D 12/10 EN
COMMAND
ADDRESS
DK#
CK#
DM
DQ
DK
CK
Bank a,
WRITE
Add n
Consecutive WRITE-to-WRITE
T0
Notes:
NOP
t
T1
RC = 4
1. DI an (or bn) = data-in for bank a (or b) and address n.
2. Three subsequent elements of the burst are applied following DI for each bank.
3. BL = 4.
4. Each WRITE command may be to any bank; if the second WRITE is to the same bank,
5. Nominal conditions are assumed for specifications not defined.
WL = 5
t
RC must be met.
288Mb: x9, x18, x36 2.5V V
Bank b,
Add n
WRITE
WL = 5
T3
NOP
Bank a,
WRITE
Add n
T4
46
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
DI
an
NOP
EXT
T5n
, 1.8V V
T6
NOP
T6n
DD
, HSTL, CIO, RLDRAM II
TRANSITIONING DATA
bn
DI
T7
NOP
©2004 Micron Technology, Inc. All rights reserved.
T7n
T8
NOP
Operations
T8n
DON’T CARE
T9
an
DI
NOP