2SJ74-V(TPE2,F) Toshiba, 2SJ74-V(TPE2,F) Datasheet

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2SJ74-V(TPE2,F)

Manufacturer Part Number
2SJ74-V(TPE2,F)
Description
Manufacturer
Toshiba
Datasheet

Specifications of 2SJ74-V(TPE2,F)

Channel Type
P
Configuration
Single
Drain Current (max)
20mA
Drain-gate Voltage (max)
25V
Operating Temperature (min)
-55C
Operating Temperature (max)
125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Supplier Unconfirmed
Low Noise Audio Amplifier Applications
Absolute Maximum Ratings
Electrical Characteristics
Recommended for first stages of EQ amplifiers and M.C. head
amplifiers.
High |Y
Low noise: E
High input impedance: I
Complimentary to 2SK170
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note:
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Note: I
DSS
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
fs
|: |Y
Characteristics
Characteristics
(V
classification GR: −2.6~−6.5 mA, BL: −6.0~−12 mA, V: −10~−20 mA
n
(V
DS
= 0.95 nV/Hz
DS
fs
| = 22 mS (typ.)
= −10 V, I
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
= −10 V, V
GSS
D
1/2
= −1 mA, f = 1 kHz)
= 1.0 nA (max) (V
GS
(typ.)
(Ta = 25°C)
= 0, I
(Ta = 25°C)
V
V
Symbol
Symbol
GS (OFF)
(BR) GDS
NG (2)
NF (1)
DSS
V
⎪Y
I
I
C
T
C
GSS
DSS
P
GDS
I
T
stg
rss
G
iss
fs
D
j
(Note)
= −3 mA)
2SJ74
GS
V
V
V
V
V
V
V
V
f = 10 Hz
V
f = 1 kHz
GS
DS
DS
DS
DS
DS
DG
DS
DS
= 25 V)
−55~125
Rating
= 0, I
= −10 V, V
= −10 V, I
= −10 V, V
= −10 V, V
= −10 V, I
= −10 V, I
= 25 V, V
= −10 V, I
−10
400
125
25
1
G
= 100 μA
Test Condition
DS
D
D
D
D
GS
GS
GS
= −0.1 μA
= −1 mA, R
= −1 mA, R
= 0, f = 1 MHz
= 0
= 0
= 0, f = 1 kHz
= 0, f = 1 MHz
Unit
mW
mA
°C
°C
V
G
G
= 1 kΩ,
= 1 kΩ,
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
−2.6
0.15
Min
25
8
Typ.
105
1.0
0.5
22
32
2-5F1D
TO-92
SC-43
2007-11-01
Max
−20
1.0
2.0
10
2
2SJ74
Unit: mm
Unit
mA
mS
nA
pF
pF
dB
V
V

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2SJ74-V(TPE2,F) Summary of contents

Page 1

... JEDEC TO-92 °C JEITA SC-43 °C TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Min Typ. ⎯ ⎯ ⎯ 25 −2.6 ⎯ ⎯ 0. ⎯ 105 ⎯ kΩ, G ⎯ 1 kΩ, G ⎯ 0.5 2007-11-01 2SJ74 Unit: mm Max Unit 1.0 nA ⎯ V −20 mA 2.0 V ⎯ mS ⎯ pF ⎯ ...

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... 2 2SJ74 2007-11-01 ...

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... 3 2SJ74 2007-11-01 ...

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... 4 2SJ74 2007-11-01 ...

Page 5

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SJ74 2007-11-01 ...

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