2SK3857TKB Toshiba, 2SK3857TKB Datasheet
2SK3857TKB
Specifications of 2SK3857TKB
Related parts for 2SK3857TKB
2SK3857TKB Summary of contents
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... TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For ECM • Application for Ultra-compact ECM Absolute Maximum Ratings Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc ...
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Electrical Characteristics Characteristic Symbol Drain Current I DSS Drain Current I D Gate-Source Cut-off Voltage V GS(OFF) Forward transfer admittance | Gate-Drain Voltage V (BR)GDO Input capacitance C iss Voltage Gain Gv Delta Voltage Gain DGv(f) Delta Voltage ...
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I – 600 VDS=2V Common Source °C 500 400 300 IDSS=330μA 200 100 IDSS=150μA 0 -1.0 -0.8 -0.6 -0.4 -0.2 Gate - Source voltage – 600 Common Source ...
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Gv– I DSS 1 0 –1 Gv:VDD=2V Cg=5pF – 2 RL= 2.2kΩ, f=1kHz vin=100mV IDSS: VDS=2V –3 VGS=0V Common Source Ta = 25°C –4 0 100 200 300 400 500 Drain Current I (µA) DSS Gv – ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...