MT49H8M36HU-33 Micron Technology Inc, MT49H8M36HU-33 Datasheet - Page 34

• Manufacturer Part Number: MT49H8M36HU-33
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H8M36HU-33

• Organization: 8Mx36
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 300MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 790mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Not Compliant

Configuration Tables
Table 18:
Burst Length (BL)
PDF: 09005aef80a41b59/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN
Valid frequency range
Parameter
t
t
t
WL
RC
RL
Cycle Time and READ/WRITE Latency Configuration Table
Notes:
Note:
Table 18 shows the different configurations that can be programmed into the mode
register. The WRITE latency is equal to the READ latency plus one in each configuration
in order to maximize data bus utilization. Bits M0, M1, and M2 are used to select the
configuration during the MRS command.
1. BL = 8 is not available.
Burst length is defined by M3 and M4 of the mode register. Read and write accesses to
the RLDRAM are burst-oriented, with the burst length being programmable to 2, 4, or 8.
Figure 12 on page 34 illustrates the different burst lengths with respect to a READ
command. Changes in the burst length affect the width of the address bus (see Table 19
on page 34 for details).
The data written by the prior burst length is not guaranteed to be accurate when the
burst length of the device is changed.
288Mb: x9, x18, x36 2.5V V
200–175
1
4
4
5
1
Configuration
33
300–175
2
6
6
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
EXT
, 1.8V V
DD
400–175
, HSTL, CIO, RLDRAM II
3
8
8
9
©2003 Micron Technology, Inc. All rights reserved.
Commands
Units
MHz
t
t
t
CK
CK
CK