MT49H8M36HU-33 Micron Technology Inc, MT49H8M36HU-33 Datasheet - Page 47

• Manufacturer Part Number: MT49H8M36HU-33
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H8M36HU-33

• Organization: 8Mx36
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 300MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 790mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Not Compliant

Figure 22:
PDF: 09005aef80a41b59/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN
COMMAND
ADDRESS
QVLD
QK#
DK#
CK#
DM
DQ
QK
DK
CK
Bank a,
WRITE-to-READ (Separated by Two NOPs)
WRITE
Add n
T0
Notes:
NOP
T1
1. DI an = data-in for bank a and address n.
2. DO bn = data-out from bank b and address n.
3. One subsequent element of each burst follow both DI an and DO bn.
4. BL = 2.
5. Only one NOP separating the WRITE and READ would have led to contention on the data
6. Nominal conditions are assumed for specifications not defined.
WL = 5
bus because of the input and output data timing conditions being used.
288Mb: x9, x18, x36 2.5V V
NOP
T2
Bank b,
Add n
READ
T3
RL = 4
46
T4
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t CKDK (MAX)
EXT
T5
NOP
an
DI
, 1.8V V
T5n
t DH
T6
NOP
DD
TRANSITIONING DATA
t CKQK (MIN)
, HSTL, CIO, RLDRAM II
t QKQ (MIN)
©2003 Micron Technology, Inc. All rights reserved.
DO
bn
T7
NOP
T7n
Operations
DON’T CARE
T8
NOP