MT49H8M36HU-33 Micron Technology Inc, MT49H8M36HU-33 Datasheet - Page 50

• Manufacturer Part Number: MT49H8M36HU-33
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H8M36HU-33

• Organization: 8Mx36
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 300MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 790mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Not Compliant

Figure 25:
Figure 26:
PDF: 09005aef80a41b59/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN
COMMAND
COMMAND
ADDRESS
ADDRESS
QVLD
QVLD
QK#
QK#
CK#
CK#
DQ
QK
QK
DQ
CK
CK
Consecutive READ Bursts (BL = 2)
Consecutive READ Bursts (BL = 4)
Notes:
Notes:
Bank a
Add n
Bank a
READ
Add n
READ
T0
T0
1. DO an (or bn or cn) = data-out from bank a (or bank b or bank c) and address n.
2. One subsequent element of the burst from each bank appears after each DO x.
3. Nominal conditions are assumed for specifications not defined.
4. Example applies only when READ commands are issued to same device.
5. Bank address can be to any bank, but the subsequent READ can only be to the same bank if
6. Data from the READ commands to bank d through bank g will appear on subsequent clock
1. DO an (or bn) = data-out from bank a (or bank b) and address n.
2. Three subsequent elements of the burst from each bank appears after each DO x.
3. Nominal conditions are assumed for specifications not defined.
4. Example applies only when READ commands are issued to same device.
5. Bank address can be to any bank, but the subsequent READ can only be to the same bank if
6. Data from the READ commands to banks c and d will appear on subsequent clock cycles
t
cycles that are not shown.
t
that are not shown.
RC has been met.
RC has been met.
Bank b
Add n
READ
288Mb: x9, x18, x36 2.5V V
NOP
T1
T1
RL = 4
RL = 4
Bank c
Add n
READ
Bank b
Add n
READ
T2
T2
49
Bank d
READ
Add n
T3
NOP
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
EXT
Bank e
Add n
READ
Bank c
, 1.8V V
Add n
T4
READ
T4
TRANSITIONING DATA
TRANSITIONING DATA
DO
an
DO
an
T4n
T4n
DD
Bank f
Add n
, HSTL, CIO, RLDRAM II
READ
T5
T5
NOP
DO
bn
©2003 Micron Technology, Inc. All rights reserved.
T5n
T5n
Bank g
Add n
DON’T CARE
READ
DON’T CARE
T6
Bank d
Add n
T6
READ
Operations
DO
cn
DO
bn
T6n
T6n