MT41J256M4HX-187E:D TR Micron Technology Inc, MT41J256M4HX-187E:D TR Datasheet - Page 7
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MT41J256M4HX-187E:D TR
Manufacturer Part Number
MT41J256M4HX-187E:D TR
Description
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Datasheet
1.MT41J256M4HX-187ED_TR.pdf
(208 pages)
Specifications of MT41J256M4HX-187E:D TR
Organization
256Mx4
Density
1Gb
Address Bus
17b
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
190mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Table 51: DDR3-1333 Speed Bins ................................................................................................................... 73
Table 52: DDR3-1600 Speed Bins ................................................................................................................... 74
Table 53: DDR3-1866 Speed Bins ................................................................................................................... 75
Table 54: Electrical Characteristics and AC Operating Conditions ................................................................... 76
Table 55: Electrical Characteristics and AC Operating Conditions for Speed Extensions ................................... 85
Table 56: Command and Address Setup and Hold Values Referenced at 1 V/ns – AC/DC-Based ....................... 95
Table 57: Derating Values for
Table 58: Derating Values for
Table 59: Derating Values for
Table 60: Derating Values for
Table 61: Minimum Required Time
Table 62: Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based .................................. 103
Table 63: Derating Values for
Table 64: Derating Values for
Table 65: Derating Values for
Table 66: Required Time
Table 67: Truth Table – Command ................................................................................................................ 110
Table 68: Truth Table – CKE ......................................................................................................................... 112
Table 69: READ Command Summary ............................................................................................................ 114
Table 70: WRITE Command Summary .......................................................................................................... 114
Table 71: READ Electrical Characteristics, DLL Disable Mode ........................................................................ 120
Table 72: Write Leveling Matrix ..................................................................................................................... 124
Table 73: Burst Order ................................................................................................................................... 133
Table 74: MPR Functional Description of MR3 Bits ........................................................................................ 142
Table 75: MPR Readouts and Burst Order Bit Mapping .................................................................................. 143
Table 76: Self Refresh Temperature and Auto Self Refresh Description ........................................................... 176
Table 77: Self Refresh Mode Summary .......................................................................................................... 176
Table 78: Command to Power-Down Entry Parameters ................................................................................. 177
Table 79: Power-Down Modes ...................................................................................................................... 178
Table 80: Truth Table – ODT (Nominal) ........................................................................................................ 188
Table 81: ODT Parameter ............................................................................................................................. 188
Table 82: Dynamic ODT Specific Parameters ................................................................................................. 189
Table 83: Mode Registers for R
Table 84: Mode Registers for R
Table 85: Timing Diagrams for Dynamic ODT ............................................................................................... 190
Table 86: Synchronous ODT Parameters ....................................................................................................... 195
Table 87: Asynchronous ODT Timing Parameters for All Speed Bins ............................................................... 200
Table 88: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period .................................. 202
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
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VAC Above V
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IS/
IS/
IS/
DS/
DS/
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TT(WR)
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IH – AC175/DC100-Based ........................................................................... 96
IH – AC150/DC100-Based ........................................................................... 96
IH – AC135/DC100-Based ........................................................................... 97
IH – AC125/DC100-Based ........................................................................... 97
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DH – AC175/DC100-Based ....................................................................... 104
DH – AC150/DC100-Based ....................................................................... 104
DH – AC135/DC100-Based ....................................................................... 105
t
VAC Above V
............................................................................................................. 190
............................................................................................................. 190
IH(AC)
(Below V
IH(AC)
IL(AC)
for Valid Transition .................................................... 98
7
) for Valid Transition ............................................. 105
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR3 SDRAM
© 2006 Micron Technology, Inc. All rights reserved.