TSEV83102G0BGL E2V, TSEV83102G0BGL Datasheet - Page 47

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TSEV83102G0BGL

Manufacturer Part Number
TSEV83102G0BGL
Description
Manufacturer
E2V
Datasheet

Specifications of TSEV83102G0BGL

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Configuration 2:
Junction Temperature
Diode Transfer
Function
2101D–BDC–06/04
Note:
Figure 53. Diode Pin Implementation of Die Junction Temperature Monitoring Function Only
The forward voltage drop (V
ture (including the chip’s parasitic resistance) is given in the following graph (I
Figure 54. Junction Temperature Versus Diode Voltage for l = 1 mA
In the preliminary specification, Atmel recommends the use of 2 x 3 head-to-tail protection
diodes.
9 4 0
9 3 0
9 2 0
9 0 0
8 9 0
8 8 0
8 6 0
8 4 0
8 3 0
8 2 0
8 0 0
9 50
8 70
8 50
79 0
9 10
8 10
-10
0
10
DIODE
2 0
), across the diode component, versus the junction tempera-
3 0
ADC Pin
GND
A10
4 0
50
6 0
70
Vdiode
VGND
Idiode
IGND
8 0
Jonction Temperature (°C)
TS83102G0B
9 0
V
10 0
1mA
DIODE
110
= 1 mA).
47