STM32L-DISCOVERY STMicroelectronics, STM32L-DISCOVERY Datasheet - Page 64

• Manufacturer Part Number: STM32L-DISCOVERY
• Description: BOARD, EVAL, STM32L-DISCOVERY
• Manufacturer: STMicroelectronics
• Series: STM32r
• Type: MCUr

Specifications of STM32L-DISCOVERY

• Kit Contents: Board, Debugger, Programmer And Compiler
• Features: 128KB Flash Plus Multiple Timers, Analogue Peripherals
• Silicon Manufacturer: ST Micro
• Core Architecture: ARM
• Core Sub-architecture: Cortex - M3
• Silicon Core Number: STM32
• Silicon Family Name: STM32F1xx
• Rohs Compliant: Yes
• Contents: Board
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: STM32L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
5.3.6
64/163
Table 14.
1. The product behavior is guaranteed by design down to the minimum V
2. Guaranteed by design, not tested in production.
3. The reset temporization is measured from the power-on (POR reset or wakeup from V
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in
measurement
All Run mode current consumption measurements given in this section are performed using
CoreMark code.
T
RSTTEMPO
V
when first instruction is read by the user application code.
E
Symbol
BORhyst
I
V
V
V
RUSH
RUSH
BOR1
BOR2
BOR3
(2)
(2)
(2)
(2)(3)
Embedded reset and power control block characteristics (continued)
scheme.
Brownout level 1
threshold
Brownout level 2
threshold
Brownout level 3
threshold
BOR hysteresis
Reset temporization
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
InRush energy on
voltage regulator
power-on (POR or
wakeup from Standby)
Parameter
Doc ID 15818 Rev 6
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
V
I
RUSH
DD
= 1.8 V, T
= 171 mA for 31 µs
Conditions
A
= 105 °C,
Figure 18: Current consumption
POR/PDR
STM32F205xx, STM32F207xx
2.13
2.23
2.44
2.53
2.75
2.85
Min
0.5
value.
-
-
-
BAT
2.19
2.29
2.50
2.59
2.83
2.92
Typ
100
160
1.5
-
) to the instant
Max
2.24
2.33
2.56
2.63
2.88
2.97
200
3.0
5.4
-
Unit
mV
mA
ms
µC
V
V
V
V
V