STD96N3LLH6 STMicroelectronics, STD96N3LLH6 Datasheet

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STD96N3LLH6

Manufacturer Part Number
STD96N3LLH6
Description
MOSFET N-CH 30V 80A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheet

Specifications of STD96N3LLH6

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
70W
Mounting Type
*
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11214-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD96N3LLH6
Manufacturer:
ST
0
Features
Application
Description
This product is an N-channel Power MOSFET that
utilizes the 6
proprietary STripFET™ technology, with a new
gate structure. The resulting Power MOSFET
exhibits the lowest R
Table 1.
January 2011
STD96N3LLH6
R
Extremely low on-resistance R
High avalanche ruggedness
Low gate drive power losses
Switching applications
– Automotive
DS(on)
Type
STD96N3LLH6
Order codes
* Q
th
Device summary
g
generation of design rules of ST’s
industry benchmark
V
30 V
DS(on)
DSS
in all packages.
R
DS(on)
0.0042 Ω
STripFET™ VI DeepGATE™ Power MOSFET
DS(on)
max
96N3LLH6
Marking
80 A
Doc ID 18432 Rev 1
I
N-channel 30 V, 0.0037 Ω , 80 A, DPAK
D
Figure 1.
Package
DPAK
G(1)
Internal schematic diagram
STD96N3LLH6
D (TAB or 2)
DPAK
S(3)
1
3
Tape and reel
Packaging
www.st.com
AM01474v1
1/15
15

Related parts for STD96N3LLH6

STD96N3LLH6 Summary of contents

Page 1

... January 2011 N-channel 30 V, 0.0037 Ω DPAK STripFET™ VI DeepGATE™ Power MOSFET max I D 0.0042 Ω DS(on) Figure 1. Marking 96N3LLH6 Doc ID 18432 Rev 1 STD96N3LLH6 3 1 DPAK Internal schematic diagram D (TAB or 2) G(1) S(3) Package Packaging DPAK Tape and reel AM01474v1 1/15 www ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/ Doc ID 18432 Rev 1 STD96N3LLH6 ...

Page 3

... STD96N3LLH6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) E Single pulse avalanche energy AS T Storage temperature stg T Max. operating junction temperature j 1 ...

Page 4

... 5 Parameter Test conditions f=1 MHz 4 Figure 13 gate-to-source Figure 18 gate-to-source MHz gate bias Bias = 0 test signal level = 20 mV open drain Doc ID 18432 Rev 1 STD96N3LLH6 Min. Typ 250 µ 0.0037 0.0042 0.0055 D Min Typ. 2200 - 400 280 = 8.2 7 Max. Unit V 1 µ ...

Page 5

... STD96N3LLH6 Table 6. Switching on/off (inductive load) Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... V ( Figure 5. AM03379v1 ( temperature Figure 7. AM03381v1 R DS(on 120 145 T (°C) J Doc ID 18432 Rev 1 STD96N3LLH6 Thermal impedance δ=0.5 0.2 0.1 0.05 -1 0.02 Zth=k Rthj-c δ=tp/τ 0.01 tp Single pulse τ Transfer characteristics I D (A) V =2V DS 300 250 200 ...

Page 7

... STD96N3LLH6 Figure 8. Gate charge vs gate-source voltage Figure (V) V =15V =80A Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) @250µA 1.2 1.0 0.8 0.6 0.4 0 AM03378v1 C (pF) 1000 100 50 Q (nC Figure 11. Normalized on resistance vs AM03383v1 R DS(on) (norm) 1.8 1.6 1.4 1.2 1 ...

Page 8

... AM01468v1 Figure 15. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 17. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 18432 Rev 1 STD96N3LLH6 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...

Page 9

... STD96N3LLH6 Figure 18. Gate charge waveform Vds Vgs(th) Qgs1 Qgs2 Qgd Id Vgs Doc ID 18432 Rev 1 Test circuits 9/15 ...

Page 10

... Min. Typ. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 2.28 4.40 9.35 1 2.80 0.80 0.60 0.20 0° Doc ID 18432 Rev 1 STD96N3LLH6 ® Max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 1 8° ...

Page 11

... STD96N3LLH6 Figure 19. DPAK (TO-252) drawing Doc ID 18432 Rev 1 Package mechanical data 0068772_G 11/15 ...

Page 12

... All dimension are in millimeters 12/15 Tape mm Dim. Max. 7 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 0.35 16.3 (a) 6.7 1.8 6.7 Doc ID 18432 Rev 1 STD96N3LLH6 Reel mm Min 1.5 C 12.8 D 20 Base qty. Bulk qty. 3 1.6 2.3 2.3 1.6 Max. ...

Page 13

... STD96N3LLH6 Figure 21. Tape for DPAK (TO-252 For machine ref. only including draft and radii concentric around B0 Figure 22. Reel for DPAK (TO-252) REEL DIMENSIONS A 10 pitches cumulative tolerance on tape +/- 0 Top cover tape User direction of feed User direction of feed 40mm min. Access hole ...

Page 14

... Revision history 6 Revision history Table 10. Document revision history Date 27-Jan-2011 14/15 Revision 1 First release. Doc ID 18432 Rev 1 STD96N3LLH6 Changes ...

Page 15

... STD96N3LLH6 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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