STD96N3LLH6 STMicroelectronics, STD96N3LLH6 Datasheet - Page 6

• Manufacturer Part Number: STD96N3LLH6
• Description: MOSFET N-CH 30V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STD96N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 70W
• Mounting Type: *
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11214-2

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
100
0.1
(norm)
(A)
BV
10
I
D
1
1.00
0.95
200
100
1.05
0.90
300
250
150
0.1
(A)
DSS
I
50
D
0
0
-55
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized BV
V
-30
GS
Tc=25°C
Tj=175°C
Sinlge
pulse
=10V
@250µA
-5
1
2
20 45
DSS
70
10
7V
4
vs temperature
95
120 145
V
V
DS
5V
4V
3V
6V
DS
(V)
Doc ID 18432 Rev 1
100µs
1ms
10ms
AM03376v1
AM03381v1
(V)
T
AM03379v1
J
(°C)
Figure 3.
Figure 5.
Figure 7.
10
R
10
10
DS(on)
K
(mΩ)
200
100
300
250
150
-2
-1
(A)
I
50
-5
D
0
δ=0.5
0.1
7
6
5
0
0
4
3
2
1
0.2
0
Single pulse
Thermal impedance
Transfer characteristics
Static drain source on resistance
V
10
DS
-4
0.01
V
=2V
2
GS
10
=10V
10
-3
0.02
4
20
10
0.05
-2
Zth=k Rthj-c
6
30
δ=tp/τ
tp
τ
10
STD96N3LLH6
-1
8
40
280dpc
t
V
p
I
(s)
GS
D
(A)
(V)
AM03380v1
AM03382v1